Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• polarization distribution inside the heterojunction [7][8]. The piezotronic effect, described first by Zhong Lin Wang in 2007, is a combination of the piezoelectric effect and the properties of non-centrosymmetric semiconductor materials [9]. 1D semiconductor nanowires (NWs) are more suitable candidates for

• the study of the piezotronic effect than nanofilms or bulk materials since the smaller physical size and larger surface-to-volume ratio of 1D NWs yields superior mechanical properties [4][10]. In addition, 1D semiconductor NWs can increase the electron mobility and achieve the confinement of light

• top-down two-step process, including ICP dry etching and selective EC wet etching. After the lift-off, a single NW was transferred to a flexible PET substrate and was fixed by ITO electrodes to form an ohmic contact for the strain sensor. We have introduced the piezotronic effect to adjust the carrier